Electronic Devices SEE 2063 for 2011/2012
WEEKLY
SCHEDULE
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Week
1
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Chapter 1: Semiconductor Material:
Introduction to Electronic Devices.
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Atomic structure,
Material classification, Energy band, Covalent bonds,
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Quiz
1
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Week
2
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:
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Conduction
in semiconductors, Free electrons and holes as carriers
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Weeks
3-6
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:
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Chapter 2: The Diodes
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Biasing
the p-n junction, Load line concept and graphical analysis, The diode resistance,
Diode model.
The diode data sheet, The diode with DC supply – serial and parallel configuration,
Diode applications: the DC power supply – Clipper, Analysis & design of rectifier with capacitor filter, Clamper, The
zener diode: characteristics and application as a voltage regulator.
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Quiz
2
&
Individual
Assignment
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Week 7
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:
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The
Diode (cont.) & Chapter
3: Amplifier Models
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Other diodes: LED, The Photo
diode, The Schottky diode, The Varactor Diode. Chapter 3: Amplifier Models: Basic amplifier model, DC blocking.
TEST 1 - 11
November 2011 (Chapter 1, 2 and 3).
Venue:
MSI @ 5 PM
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Quiz
3
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Week 8
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Mid-semester Break
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Week
9-11
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:
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Chapter
4: The Bipolar Junction Transistor (BJT)
Basic Operation, Configuration and current relationship,
Operational regions, DC load line, BJT Device specification & Data Sheet,
Design & analysis of biasing circuits, Bias Stability, Amplification
Concept (graphical)
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Quiz
4
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Week
12
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:
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Chapter 5: The Field Effect Transistor (FET)
MOSFET
Basic operation, Configuration, Operational regions, Biasing Circuits, DC
load line, Device specification & data sheets, Amplification concept
(graphical), Design and Stability of MOSFET biasing circuit, Introduction to
other FET: structure and basic operation of CMOS, MESFET.
TEST 2 – 9 December 2011 (Chapter
4 & 5).
Venue:
MSI @ 5:00 PM
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Group
Assignment
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Week
13
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:
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Chapter 6: Diode and Transistor
as Switches: The diode, FET and BJT as switches – basic gate circuits.
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Week 14
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:
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Chapter
7: Thyristors & Other devices
The four
layer diode: p-n-p-n diode, firing (breakover voltage VBO), p-n-p-n diode can
be splitted into p-n-p and n-p-n type transistors, p-n-p-n characteristics, Bilateral
diode switch (DIAC), Silicon controlled rectifier (SCR), Volt-ampere
characteristics of a three-terminal SCR, Bilateral triode switch (TRIAC),
Negative Resistance Device: Unijunction Transistor (UJT), UJT characteristic,
Programmable Unijunction Transistor (PUT)
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Week 15
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Study Week
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Weeks 16-18
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Revision Week and Final
Examination
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REFERENCES
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1. Rubita Sudirman, Puspa Inayat
Khalid, Siti Hawa Ruslan, Electronic Devices, UTM Press, 2010.
2.
Thomas L. Floyd, Electronic Devices, 9th
Edition, Prentice Hall, New Jersey, 2008.
3. Neamen, Donald. A., Microelectronics - Circuit Analysis and
Design, 3rd Ed., McGraw Hill, Int. Ed. 2007.
4.
Robert. Paynter, Introductory Electronic Devices and
Circuits, 7th Edition Prentice Hall, New Jersey, 2006.
5. Boylestad and Nashelsky, Electronic Devices and Circuit Theory,
9th Edition Prentice Hall, New Jersey, 2006.
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GRADING:
Items
|
Mark
(%)
|
No
of test/quiz/assignment
|
Date
|
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Assignment (Evaluation of CTPS3)
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10
|
4
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Quizzes
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10
|
4
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Test 1
|
15
|
1
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Test 2
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15
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1
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Final Exam
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50
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1
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