Course Outline

Electronic Devices SEE 2063 for 2011/2012

WEEKLY SCHEDULE

 

Week 1                 

:

Chapter 1: Semiconductor Material:

Introduction to Electronic Devices.

 

 

 

Atomic structure, Material classification, Energy band, Covalent bonds,

Quiz 1

Week 2   

:

Conduction in semiconductors, Free electrons and holes as carriers

 

Weeks 3-6             

:

Chapter 2: The Diodes

 

 

 

Biasing the p-n junction, Load line concept and graphical analysis, The diode resistance, Diode model. The diode data sheet, The diode with DC supply – serial and parallel configuration, Diode applications: the DC power supply – Clipper, Analysis & design of rectifier with capacitor filter, Clamper, The zener diode: characteristics and application as a voltage regulator.

 


 

Quiz 2

&

Individual Assignment

Week 7  

:

The Diode (cont.) & Chapter 3: Amplifier Models

 

 

 

Other diodes: LED, The Photo diode, The Schottky diode, The Varactor Diode. Chapter 3: Amplifier Models: Basic amplifier model, DC blocking.

TEST 1 -  11 November 2011 (Chapter 1, 2 and 3).

Venue: MSI @ 5 PM

 

Quiz 3

Week 8  

 

Mid-semester Break

 

Week 9-11       

:

Chapter 4: The Bipolar Junction Transistor (BJT)

Basic Operation, Configuration and current relationship, Operational regions, DC load line, BJT Device specification & Data Sheet, Design & analysis of biasing circuits, Bias Stability, Amplification Concept (graphical)

Quiz 4

Week 12          

:

Chapter 5: The Field Effect Transistor (FET)

MOSFET Basic operation, Configuration, Operational regions, Biasing Circuits, DC load line, Device specification & data sheets, Amplification concept (graphical), Design and Stability of MOSFET biasing circuit, Introduction to other FET: structure and basic operation of CMOS, MESFET.

TEST 2 – 9 December 2011 (Chapter 4 & 5).

Venue: MSI @ 5:00 PM

 

 

Group Assignment

Week 13

:

Chapter 6: Diode and Transistor as Switches: The diode, FET and BJT as switches – basic gate circuits.

 

 

 

 

 

Week 14   

:

Chapter 7: Thyristors & Other devices

The four layer diode: p-n-p-n diode, firing (breakover voltage VBO), p-n-p-n diode can be splitted into p-n-p and n-p-n type transistors, p-n-p-n characteristics, Bilateral diode switch (DIAC), Silicon controlled rectifier (SCR), Volt-ampere characteristics of a three-terminal SCR, Bilateral triode switch (TRIAC), Negative Resistance Device: Unijunction Transistor (UJT), UJT characteristic, Programmable Unijunction Transistor (PUT)

 

 

 

 

 

Week 15   

 

Study Week

 

 

 

 

 

Weeks 16-18  

:

Revision Week and Final Examination

 

 

REFERENCES

 

:

 

1.   Rubita Sudirman, Puspa Inayat Khalid, Siti Hawa Ruslan, Electronic Devices, UTM Press, 2010.

2.    Thomas L. Floyd, Electronic Devices, 9th Edition, Prentice Hall, New Jersey, 2008.

3.   Neamen, Donald. A., Microelectronics - Circuit Analysis and Design, 3rd Ed., McGraw Hill, Int.  Ed. 2007.

4.    Robert. Paynter, Introductory Electronic Devices and Circuits, 7th Edition Prentice Hall, New Jersey, 2006.

5.   Boylestad and Nashelsky, Electronic Devices and Circuit Theory, 9th Edition Prentice Hall, New Jersey, 2006.


GRADING:

Items

Mark (%)

No of test/quiz/assignment

Date

Assignment (Evaluation of CTPS3)

10

4

 

Quizzes

10

4

 

Test 1

15

1

 

Test 2

15

1

 

Final Exam

50

1

 




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