Course Outline

 

 

Lecturer

:

Ir. Dr. Michael Tan Loong Peng

Room No.

:

P19a-05-02-12

Telephone No.

:

07-5557171

E-mail

:

michael@fke.utm.my

Synopsis

:

This course offers an introduction to modelling and simulation of microelectronic devices.  Today, computer-aided design has become an affordable and in fact necessary tool for designing contemporary devices.    The purpose of this course is to provide fundamental device modelling technique with emphasis on the silicon metal-oxide-semiconductor field-effect-transistor (MOSFET).  Examples on modelling carbon-based materials such as carbon nanotubes and graphene are also explored. There are discussions on crystal structure of solid, quantum system, carrier transport properties in 3D, 2D and 1D system. The goal of this course is to provide fundamental concepts and basic tools for transistor-level simulation that can be enhanced for circuit simulation.

LEARNING OUTCOMES

 

By the end of the course, students should be able to:

No.

Course Learning Outcome

Programme

Outcome

Taxonomies

and

Soft-Skills

Assessment Methods

CO1

Comprehend the band theory of crystalline semiconductor and the carrier transport properties.

PO1

C1

T,Q,HW, F

CO2

Understand the physical model of semiconductor devices and their analytical solutions and limitations.

PO1

C2

T,Q,HW, F

CO3

Develop models for carrier transport analysis and device simulation.

PO3

C4, CTPS3

 

T,Q,HW, F

CO4

Derive and solve the equations for carrier transport in semiconductors and carbon-base materials.

PO3

C4, CTPS3

 

T,Q,HW, F

C05

Demonstrate the device modelling and circuit simulation of MOSFET, carbon nanotubes FET and graphene FET.

PO4

C4, CTPS3

 

T,Q,HW, F

(T – Test ; PR – Project ; Q – Quiz; HW – Homework ; Pr – Presentation; F – Final Exam)

 

 

STUDENT LEARNING TIME (SLT)

 

Teaching and Learning Activities

Student Learning Time (hours)

1.    Face-to-Face Learning

a.    Lecturer-Centered Learning

                               i.    Lecture

 

38

b.    Student-Centered Learning (SCL)

                               i.    Laboratory/Tutorial

                              ii.    Student-centered learning activities – Active Learning, Project Based Learning

 

 

4

 

2.    Self-Directed Learning

a.    Non-face-to-face learning or student-centered learning (SCL) such as manual, assignment, module, e-Learning, etc.

32

b.    Revision

23

c.    Assessment Preparations

18

3.    Formal Assessment

a.    Continuous Assessment (1 Quiz & 2 Tests)

2.5

b.    Final Exam

2.5

Total (SLT)

120

 

 

TEACHING METHODOLOGY

 

  • Formal Lecture and Discussion,
  • Teaching Module,
  • Power Point presentation,
  • Exercises,
  • Group and individual assignments and presentation

 

 

 

 

 

 

 

 

WEEKLY SCHEDULE

 

Week 1

:

Topic 1 : Review of Semiconductor Physics

Fermi-Dirac Distribution, Density of States, Thermal Equilibrium of Electron and Holes

Week 2-3

:

Topic 2 : Introduction to Near-equilibrium Transport

Ohm’s Law, Diffusive Transport, Conductance (resistance), Carrier Transport in Semiconductor, Transport at Molecular Scale

Week 4

:

Topic 3 : The New Ohm’s Law

Change in Paradigm, Two Key Concepts, Why Electron Flow, Generalized Ohm’s Law, Conductivity and Ballistics

Week 5-6

:

Topic 4 : Modeling a Transistor

Types of Electron Transport, Mathematical Model, Modes, Transmission, Near-equilibrium transport

Week 7

:

Topic 5 : Advance Concepts

Quantum Capacitance, Interface Traps Charges, Effective Mass Approximation,

The Non-Equilibrium Green’s Function, Top-of-the-barrier (Natori) Approach

 

Week 8

:

Mid- Semester Break

Week 9 - 10

:

Topic 6 : MOSFET DC Model

Drain current calculations, Pao-Sah model, Charge-sheet model, Charge-based model, Surface-Potential Based Models, Compact model, Long and short channel model.

Week 11-12

:

Topic 7 : Simulation Software and Modeling Tools

MATLAB, PSPICE, HSPICE and CADENCE

 

Week 13-14

:

Topic 8 : Carbon Nanotube Field-Effect Transistor

Device modelling and circuit simulation, FETTOY,  - http://www.cnt.ecs.soton.ac.uk/CNT_website.htm

 

Week 15

:

Topic 9 : Graphene Field-Effect Transistor

Device modelling and circuit simulation - http://www.cnt.ecs.soton.ac.uk/gfet_web/gfet_web.html

 

Week 16-18

:

Revision Week and Final Examination

 

 

 

 

REFERENCES :

 

1.    Lundstrom, M., Guo J., DEVICE PHYSICS, MODELING AND SIMULATION, Springer, 2006.

2.    Lundstrom, M., Jeong C., NEAR-EQUILIBRIUM TRANSPORT: FUNDAMENTALS AND APPLICATIONS, World Scientific, 2013, Link: https://nanohub.org/resources/11763

3.    Datta, Supriyo, LESSON FROM NANOELECTRONICS, A NEW PERSPECTIVE ON TRANSPORT, World Scientific, 2012, Link: https://nanohub.org/courses/ECE595/01a

4.    Arora, N., MOSFET MODELING FOR VLSI SIMULATION: THEORY AND PRACTICE, World Scientific 2007.

5.    Javey, A., Kong, J., CARBON NANOTUBE ELECTRONICS, Springer, 2009.

6.    Wong, H.S.P., Akinwade, D., CARBON NANOTUBE AND GRAPHENE DEVICE PHYSICS, Cambridge University Press, 2011.

 

GRADING:

 

No.

Assessment

Number

% each

% total

Dates

1

Quiz

1

5

5

 

2

Assignment

1

20

10

 

3

Tests

2

15

30

 

4

Presentation

1

5

5

 

5

Final Exam

1

50

50

 

 

Total

6

90%

100%

 

 

 

 

 

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