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1
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Ir. Dr.
Michael Tan Loong Peng
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P19A –
05-02-12
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012-5615493
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michael@fke.utm.my
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Synopsis
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This
course offers an introduction to modeling and simulation of microelectronic
devices. Today, computer-aided design
has become an affordable and in fact necessary tool for designing
contemporary devices. The purpose of
this course is to provide fundamental device modeling techniques with
emphasis on the silicon metal-oxide-semiconductor field-effect-transistor
(MOSFET). Examples on modeling
carbon-based materials such as carbon nanotubes and graphene are also
explored. There are discussions on crystal structure of solid,
quantum system, carrier transport properties in 3D, 2D and 1D system. The goal of this course is to provide fundamental
concepts and basic
tools for transistor-level simulation that can be enhanced
for circuit simulation.
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LEARNING
OUTCOMES
By the end of the course, students should be able
to:
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STUDENT LEARNING TIME (SLT)
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Teaching
and Learning Activities
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Student
Learning Time (hours)
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1.
Face-to-Face
Learning
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a.
Lecturer-Centered
Learning
i. Lecture
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38
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b.
Student-Centered
Learning (SCL)
i. Laboratory/Tutorial
ii. Student-centered learning activities – Active
Learning, Project Based Learning
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4
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2.
Self-Directed
Learning
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a.
Non-face-to-face learning or student-centered learning (SCL) such as manual, assignment, module,
e-Learning, etc.
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32
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b.
Revision
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23
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c.
Assessment
Preparations
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18
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3.
Formal
Assessment
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a.
Continuous
Assessment
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2.5
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b.
Final Exam
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2.5
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Total
(SLT)
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120
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TEACHING
METHODOLOGY
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- Formal Lecture and Discussion,
- Teaching Module,
- Power Point presentation,
- Exercises,
- Individual assignments and presentation
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WEEKLY SCHEDULE
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Week 1
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Topic 1 : Quantum Well
Birth of a
Quantum Era, de Broglie wavelength, Photon Emission and Absorption, Quantum
Wells, Density of States (3D, 2D, 1D)
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Week 2 - 4
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Topic 2 : Carrier Statistics
Fermi–Dirac
Distribution Function, Bulk (3D) Carrier Distribution, Carrier Statistics in
Low Dimensions
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Week 4 - 6
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Topic 3 : Nonequilibrium Carrier
Statistics and Transport
Tilted Band Diagram in an Electric
Field, Velocity Response to an Electric Field, Ballistic Mobility, Quantum
Emission
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Week 7 - 8
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Topic 4 : Charge Transport
Ohmic
(Linear) Transport, Discovery of Saturation Law, Charge Transport in 2D and
1D Resistors, Charge Transport in a CNT, Power Consumption, Transit Time
Delay, RC Time Delay, Transient Delay, Voltage and Current Division
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Week 9
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Mid- Semester Break
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Week 10 - 11
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Topic 5 : Nano-MOSFET and Nano-CMOS
MOS
Capacitor, I–V Characteristics of Nano-MOSFET, Long- (LC) and Short-Channel
(SC) MOSFET, Model Refinements for Nano-CMOS Application
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Week 11 - 12
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Topic 6 : Quantum Transport in
Carbon-Based Devices
Ballistic
Transport in Graphene, CNT, and GNR, Device Modeling and Circuit Simulation.
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Week 13 - 15
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Topic 7 : Simulation software and
modeling tools
MATLAB, PSPICE, HSPICE, CADENCE
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Week 16-18
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Revision Week and Final Examination
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REFERENCES :
1. Arora, VK, NANOELECTRONICS QUANTUM ENGINEERING OF
LOW-DIMENSIONAL NANOENSEMBLES, Taylor & Francis Group, 2015.
2.
Wong,
H.S.P., Akinwade, D., CARBON NANOTUBE AND GRAPHENE DEVICE PHYSICS, Cambridge
University Press, 2011.
3.
Javey,
A., Kong, J., CARBON NANOTUBE ELECTRONICS, Springer, 2009
4.
Lundstrom, M., Guo J., DEVICE
PHYSICS, MODELING AND SIMULATION, Springer, 2006.
GRADING:
Item
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Mark (%)
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No of test/quiz/assignment
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Duration
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CO (%)
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Assignments & Presentation (Evaluation of
LL1-2, CS1)
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10
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1 Presentation
1 Project
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-
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CO4 - 5
CO4 - 5
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Quizzes (Evaluation of CTPS1-3)
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10
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8 Quizzes
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-
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Q1-4 CO1 - 5
Q5-8 CO2 - 5
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Test 1 (week 7)
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15
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1
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1 hour
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T1 CO1 – 15
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Test 2 (week 13)
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15
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1
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1 hour
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T2 CO2 – 15
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Final Exam
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50
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1
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2.5 hours
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Part A CO2 – 10
Part B CO3 – 40
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