Course Outline

Section

Lecturer

Room No.

Mobile

email

1

Ir. Dr. Michael Tan Loong Peng

P19A – 05-02-12

012-5615493

michael@fke.utm.my

 

Synopsis

:

This course offers an introduction to modeling and simulation of microelectronic devices.  Today, computer-aided design has become an affordable and in fact necessary tool for designing contemporary devices.    The purpose of this course is to provide fundamental device modeling techniques with emphasis on the silicon metal-oxide-semiconductor field-effect-transistor (MOSFET).  Examples on modeling carbon-based materials such as carbon nanotubes and graphene are also explored. There are discussions on crystal structure of solid, quantum system, carrier transport properties in 3D, 2D and 1D system. The goal of this course is to provide fundamental concepts and basic tools for transistor-level simulation that can be enhanced for circuit simulation.

LEARNING OUTCOMES

 

By the end of the course, students should be able to:

No.

Course
Learning
Outcome

Programme

Learning Outcome

Taxonomies

and

Soft-Skills

Assessment Methods

CLO1

To comprehend the band theory of crystalline semiconductor and apply the carrier statistics properties for device modeling

PLO1

C1

T1, Q

CLO2

To analyse the carrier transport phenomena in microelectronics circuit at the breakdown of Ohm’s Law

PLO1

C2

T2, F, Q

CLO3

To derive and solve complex equations for current transport in long and short channel silicon-based devices and quantum transport in carbon-based materials.

PLO3

C3

T2, F

CLO4

To articulate and communicate the simulation of field-effect transistor using appropriate tools.

PLO6

P4

A

(T – Test ; Q – Quiz; HW – Homework ; Pr – Presentation; F – Final Exam ; A - Assignment)

 

 

STUDENT LEARNING TIME (SLT)

 

Teaching and Learning Activities

Student Learning Time (hours)

1.    Face-to-Face Learning

a.    Lecturer-Centered Learning

                                 i.    Lecture

 

38

b.    Student-Centered Learning (SCL)

                                 i.    Laboratory/Tutorial

                                ii.    Student-centered learning activities – Active Learning, Project Based Learning

 

 

4

 

2.    Self-Directed Learning

a.    Non-face-to-face learning or student-centered learning (SCL) such as manual, assignment, module, e-Learning, etc.

32

b.    Revision

23

c.     Assessment Preparations

18

3.    Formal Assessment

a.    Continuous Assessment

2.5

b.    Final Exam

2.5

Total (SLT)

120

 

 

TEACHING METHODOLOGY

 

  • Formal Lecture and Discussion,
  • Teaching Module,
  • Power Point presentation,
  • Exercises,
  • Individual assignments and presentation

 

 

 


WEEKLY SCHEDULE

 

Week 1

:

Topic 1 : Quantum Well

Birth of a Quantum Era, de Broglie wavelength, Photon Emission and Absorption, Quantum Wells, Density of States (3D, 2D, 1D)

 

Week 2 - 4

:

Topic 2 : Carrier Statistics

Fermi–Dirac Distribution Function, Bulk (3D) Carrier Distribution, Carrier Statistics in Low Dimensions

 

Week 4 - 6

:

Topic 3 : Computation Of Materials Via Denisty Functional Theory Methods

Introduction to Density Functional Theory, Calculation of round state charge density of a many-body quantum system

Week 7 - 8

:

Topic 4 : Charge Transport

Ohmic (Linear) Transport, Discovery of Saturation Law, Charge Transport in 2D and 1D Resistors, Charge Transport in a CNT, Power Consumption, Transit Time Delay, RC Time Delay, Transient Delay, Voltage and Current Division

 

Week 9

:

Mid- Semester Break

Week 10 - 11

:

Topic 5 : Nano-MOSFET and Nano-CMOS

MOS Capacitor, I–V Characteristics of Nano-MOSFET, Long- (LC) and Short-Channel (SC) MOSFET, Model Refinements for Nano-CMOS Application

 

Week 11 - 12

:

Topic 6 : Quantum Transport in Carbon-Based Devices

Ballistic Transport in Graphene, CNT, and GNR, Device Modeling and Circuit Simulation.

 

Week 13 - 15

:

Topic 7 : Simulation software and modeling tools

Preparation of environment and installation of WIEN2k, Electronic properties (band structures, density of states), optical properties (refractive index, optical conductivity), and magnetic properties (magnetic moment).

 

Week 16-18

:

Revision Week and Final Examination

 

 

REFERENCES :

 

1.    Arora, VK, NANOELECTRONICS QUANTUM ENGINEERING OF LOW-DIMENSIONAL NANOENSEMBLES, Taylor & Francis Group, 2015.

2.    Wong, H.S.P., Akinwade, D., CARBON NANOTUBE AND GRAPHENE DEVICE PHYSICS, Cambridge University Press, 2011.

3.    Javey, A., Kong, J., CARBON NANOTUBE ELECTRONICS, Springer, 2009

4.    Lundstrom, M., Guo J., DEVICE PHYSICS, MODELING AND SIMULATION, Springer, 2006.

 

GRADING:

 

Item

Mark (%)

No of test/quiz/assignment

Duration

CO (%)

Assignments & Presentation (Evaluation of LL1-2, CS1)

10

Assignment 1
Assignment 2


-

CO4 - 5
CO4 - 5

 

 

Quizzes (Evaluation of CTPS1-3)

10

Quizzes 1-2

Quizzes 3-4

-

Q1-2 CO1 - 5
Q3-4 CO2 - 5

Test 1 (week 7)

15

1

1 hour

T1 CO1 – 15

Test 2 (week 13)

15

1

1 hour

T2 CO2 – 15

Final Exam

50

1

2.5 hours

Part A CO2 – 10
Part B CO3 – 40

 

 

 

 

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