Publications Backup

Journal Papers

  1. “Ballistic Quantum Transport in a Nanoscale Metal-Oxide- Semiconductor Field Effect Transistor,” Applied Physics Letters, Vol. 91, No. 1, 103510, 2007. 
    (Impact Factor=3.726)

  2. “ Enhancement of Nano-RC Switching Delay due to the Resistance Blow-Up in InGaAs,”
    NANO, vol. 2, no. 4  pp. 233-237, 2007. 
    (Impact Factor=1.110)


  3. “The Ultimate Ballistic Drift Velocity in a Carbon Nanotubes,”
    Journal of Nanomaterials
    , Article ID Number 769250, 8 pages, doi: 10.1155/2008/769250, 2008.
    (Impact Factor=0.688)


  4. “Ballistic Mobility and Saturation Velocity in Low-Dimensional Nanostructure,” Microelectronics Journal, vol. 40,  pp. 540– 542 (2009).
    (Impact Factor= 0.859)

  5. Scattering-Limited and Ballistic Transport in a Nano-CMOS Circuit,” Microelectronics Journal, vol. 40,  pp. 581– 583 (2009).
    (Impact Factor= 0.859

  6. “The drain velocity overshoot in an 80-nm metal-oxide-semiconductor field-effect-transistor,”  Journal of Applied Physics, vol. 105, p. 074503,  2009.
    (Impact Factor= 2.201)


  7. “The High-Field Drift Velocity in Degenerately-Doped Silicon Nanowires,”
    International Journal of Nanotechnology, vol. 6, pp. 601-617, 2009. 
    (Impact Factor= 1.184)


  8. Nano-Physics of Transient Phenomenon in Semiconducting Devices and Circuits,” 
    Jurnal Teknologi D (UTM, Malaysia), June 2009 (no. 50).
    (Scopus Indexed)

  9. “The Dependence of Saturation Velocity on Temperature, Inversion Charge and Electric Field in a Nanoscale MOSFET,” 
    International Journal of Nano Electronics and Materials (IJNeM),  December 2009.
    (
    Scopus Indexed).

  10. “Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor,”
    Microelectronics Journal, vol. 41, pp. 579-584, 2010
    (Impact Factor= 0.859).

  11. "Resistance Blow-Up Effect in Micro-Circuit Engineering",
    Solid State Electronics, vol. 54, pp. 1617-1624, 2010. 
    (Impact Factor= 1.494)


  12. The drift response to a high-electric-field in carbon nanotubes,"
    Current Nanoscience, vol. 6, pp. 492-495.(2010).
    (Impact Factor= 1.472)

  13. “Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field,”
    Journal of Applied Physics, 108, 114314 (2010). 
    (Impact Factor= 2.072)


  14. “Micro-Circuit Modeling and Simulation Beyond Ohm’s Law,”
    IEEE Transactions on Education, vol  54, no. 1, 2011  
    (Impact Factor= 1.400).


  15. “Temperature-dependent ballistic transport in a channel with length below the scattering-limited mean free path,”
    Journal of Applied Physics,
    111, 054301 (2012)
    (Impact Factor= 2.079)

  16. Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET,”
    Nanoscale Research Letters (2012), 
    7:467
    (Impact Factor= 2.73)

  17. "High-field transport in a graphene nanolayer,"
    Journal of Applied Physics, 112, pp. 114330-4, (2012).

    (Impact Factor= 2.072).

  18. "Graphene Nanoribbon Field Effect Transistor Logic Gates Performance Projection," 
    Journal of Computational and  Theoretical Nanoscience 10, 1164-1170 (2013)
    (Impact Factor= 0.65)

  19. "Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs,"
    Journal of Nanomaterials, Volume 2013 (2013), Article ID 831252, 5 pages
    (
    Impact Factor= 1.547)

  20. "Analytical Modeling of Glucose Biosensors Based on Carbon Nanotubes,"
    Nanoscale Research Letter (Jan 2014), 9:13
    (Impact Factor= 2.52)

  21. "Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects"
    Journal of Nanomaterials, Volume 2014 (2014), Article ID 879813
    (Impact Factor= 1.547)

  22. "A Unified Drain-Current Model of Silicon Nanowire Field-Effect Transistor (SiNWFET) for Performance Metric Evaluation,"
    Science of Advanced Material
    6, 354-360 (Feb 2014)
    (Impact Factor= 2.509)

  23. "Nanoscale Device Modeling and Circuit-level Performance Projection of Top-gated Graphene Nanoribbon Field-Effect Transistor for Digital Logic Gates,"
    Science of Advanced Material 6, 569-576 (March 2014)

    (Impact Factor= 2.509)

  24. "Performance Benchmarking of 32 nm Predictive Technology Model CMOS with Silicon Nanowire Physic-based Compact Model of Field-Effect Transistors for Digital Logic Applications", 
    Science of Advanced Material 6, 596-602 (March 2014).
    (Impact Factor= 2.509)

  25. "Stability and Power Evaluation of 14 nm FinFET-based 6T SRAM Cell Functionality in RC Timing Analysis"
    Journal of Nanomaterials, Volume 2014 (August 2014), Article ID 820763
    (Impact Factor= 1.611)


  26. "Quasi-One-Dimensional Performance and Benchmarking of CMOS-based Multichannel Carbon Nanotube versus Nanowire Field-Effect Transistors" - In Press

  27. "Performance Evaluation of Silicon Nanowire Gate-All-Around Field-Effect Transistors and their dependence of Channel Length and Diameter" - In Press

  28. "Low Dimensional Simulator for Ballistic Carbon Nanotubes and Graphene Nanoribbon Field-Effect Transistors Model" - Major Correction

  29. "Design and Performance Analysis of 1-bit FinFET Full Adder Cells for Subthreshold Region at 16nm Process Technology" Under review

  30. "Electron Transport in a Scaled-Down Channel Carbon Nanotubes from Drift-Diffusion to Ballistic Transmission" - Under consideration

  31. "An Empirical Modeling of a Graphene Field-Effect Sensor,"  
    Journal of Computational and  Theoretical Nanoscience, Volume 12, No. 2, 2015
     

    (Accepted with Impact Factor= 1.032)
    - In Press


Conference papers

  1. The Ultimate Drift Velocity in Degenerately-Doped Silicon,” IEEE Regional Symposium on Microelectronics (RSM 2007), Penang, Malaysia, (3-6 December 2007).

  2. Velocity Saturation Dependence on Temperature, Substrate Doping Concentration and Longitudinal Electric Field in Nanoscale MOSFET.  IEEE Proceedings National Symposium on Microelectronics, 22 – 24 Nov. 2005, Kuching, Sarawak, pp. 210-214.

  3. Band Structure Effects on the Carbon Nanotube Carrier Statistics”  24th  Regional Conference on Solid State Science and Technology 2008 (RCSSST2008), November 30 – December 2 2008, Tiara Beach Resort, Port Dickson. Negeri Sembilan, Malaysia.

  4. “The Micro-Circuit Engineering in the Nonohmic Domain,” 11th International Conference on Computer Modelling and Simulation (UKSim2009), Emmanuel College, Cambridge, England, March 25-27, 2009. Available in the IEEE Xplore (a Scopus listing).

  5. “SPICE circuit modeling of single-walled carbon nanotube field-effect-transistor and performance comparison with metal oxide semiconductor field-effect-transistor,” Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics (IEEE-RSM2009), Kota Bharu, Malaysia, August 10-12, 2009.  Available in the IEEE Xplore (a Scopus listing). 

  6. “Nano-CMOS Circuit Design in the Nonohmic Domain,”  Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics (IEEE-RSM2009), Kota Bharu, Malaysia, August 10-12, 2009.  Available in the IEEE Xplore (a Scopus listing). rsity

  7. “The Role of Ballistic Mobility and Saturation Velocity in Performance Evaluation of a Nano-CMOS Circuit,” Proceedings of the IEEE International Conference on Eemerging Trends in Electronic and Photonic Devices & Systems, (ELECTRO-2009) December 22-24, 2009.

  8. “High-Field Initiated Ballistic Transport in Carbon Nanotubes” Proceedings of the IEEE International Semiconductor Device Research Symposium 2009 (ISDRS), University of Maryland, College Park, Maryland, USA.

  9. “Nano-CMOS Circuit Design and Performance Evaluation by Inclusion of Ballistic Transport Processes” , Proceedings of the IEEE International Semiconductor Device Research Symposium 2009 (ISDRS), University of Maryland, College Park, Maryland, US. 

  10. “Performance Prediction of Graphene-Nanoribbon and Carbon Nanotube Transistor”, Proceedings of the IEEE on International Conference on Enabling Science and Nanotechnology,  (Nanotech Malaysia 2010), 1-3 December, 2010, KLCC, Malaysia.

  11. “Mobility Diminution in a Nano-MOSFET due to Carrier Injection from the Ohmic Contacts”, Proceedings of the IEEE International Conference on Enabling Science and Nanotechnology,  (ESciNano 2010), 1-3 December, 2010, KLCC, Malaysia.

  12.   “Universal Velocity-Field Characteristics for a Nanowire of Arbitrary Degeneracy”, Proceedings of the IEEE International Conference on Enabling Science and Nanotechnology,  (ESciNano 2010), 1-3 December, 2010, KLCC, Malaysia.

  13. “Mobility degradation in a nano-MOSFET due to Ballistic and High-Field Effects ”, Proceedings of the IEEE International Conference on Enabling Science and Nanotechnology,  (ESciNano 2012), 5-7 January, 2012, Persada Johor, Johor Bahru, Malaysia.

  14. “High-field transport in graphene and carbon nanotubes”, IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2013), 3-5 June 2013, Hong Kong.

  15. "Design and Implementation of a 1-bit FinFET Full Adder Cell for ALU in Subthreshold Region" ICSE 2014

  16. "Low Dimensional Simulator for Carbon-based Devices" ICSE 2014

Book Chapter

  1. Book Chapter: Device and Circuit Modeling of Nano-CMOS, Computational Nanotechnology:
    Modeling and Applications with MATLAB®, CRC Press, Taylor and Francis Group, 2011
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